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2SD1479 |
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| Part Number | 2SD1479 |
| Manufacturer | INCHANGE |
| Description | ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal deflection ... |
| Features |
T
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
hFE
DC Current Gain
IC= 2A; IB= 1A
VCB= 750V; IE= 0 VCB= 1500V; IE= 0
IC= 2A; VCE= 5V
5.0
V
1.5
V
50 μA 1.0 mA
2
tstg
Storage Time
tf
Fall Time
IC= 2.5A, IBend= 1.1A, LB= 10μH
9
μs
1
μs
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applic... |
| Document |
 2SD1479 Data Sheet
PDF 208.28KB |
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