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| Part Number | 2SD1088 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SD1088 |
| Manufacturer | GME |
| Title | High Voltage Darlington Power Transistors |
| Description | High Voltage Darlington Power Transistors FEATURES Collector-emitter Sustaining Voltage VCEO(SUS)=250V(Min). Collector-Emitter Saturation Voltage VCE(sat0=2V(Max)@IC=4A,IB=40mA. High DC Current Gain hFE=2000(Min)@IC=2A,VCE=2V. Pb Lead-free Production specification 2SD1088 TO-220AB MAXIMUM. |
| Features |
Collector-emitter Sustaining Voltage VCEO(SUS)=250V(Min). Collector-Emitter Saturation Voltage VCE(sat0=2V(Max)@IC=4A,IB=40mA. High DC Current Gain hFE=2000(Min)@IC=2A,VCE=2V. Pb Lead-free Production specification 2SD1088 TO-220AB MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Unit VCBO Collector-Base Voltage 300 V VCEO VEBO IC. |
| Part Number | 2SD1088 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220 package ·High DC current gain ·DARLINGTON APPLICATIONS ·For switching igniter applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PD . |
| Features | or cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance CONDITIONS IC=0.5A ;L=40mH IC=4A;IB=0.04A IC=4A ;IB=0.04A VCB=300V; IE=0 VEB=5V; IC=0 IC=2A ; VCE=2V IC=4A ; VCE=2V f=1MHz;VCB=50V 2000 200 MIN 250 www.datasheet4u.com 2SD1088 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB TYP. MAX UNIT V 2.0 2.5 0.5 0.5 V V mA mA 35 pF 2 Sa. |
| Part Number | 2SD1088 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 250V(Min) ·High DC Current Gain- : hFE= 2000(Min.)@IC= 2A ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 4A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in. |
| Features | trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 40mA VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 40mA ICBO Collector Cutoff Current VCE= 300V; IE= 0 IEBO Emitte. |
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Desde 2024. D4U Semiconductor.
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