Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2SC6082 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC6082 |
| Manufacturer | INCHANGE |
| Title | TO-263 NPN Transistor |
| Description | ·Large current capacitance ·High speed switching ·Low saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage. |
| Features | lector-Emitter Saturation Voltage IC= 7.5A; IB= 0.375A VBE(sat) Base-Emitter Saturation Voltage IC= 7.5A; IB= 0.375A ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.4 V 1.2 V 10 μA 10 μA hFE-1 DC Current Gain IC= 330mA; VCE= 2V 200 560 hFE-2 DC Current Gain IC= 10A; VCE= 2V 50 NOTICE： ISC reserves the rights to make changes of the . |
| Part Number | 2SC6082 |
| Manufacturer | INCHANGE |
| Title | TO-252 NPN Transistor |
| Description | ·Large current capacitance ·High speed switching ·Low saturation voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage. |
| Features | lector-Emitter Saturation Voltage IC= 7.5A; IB= 0.375A VBE(sat) Base-Emitter Saturation Voltage IC= 7.5A; IB= 0.375A ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 0.4 V 1.2 V 10 μA 10 μA hFE-1 DC Current Gain IC= 330mA; VCE= 2V 200 560 hFE-2 DC Current Gain IC= 10A; VCE= 2V 50 NOTICE： ISC reserves the rights to make changes of the . |
| Part Number | 2SC6082 |
| Manufacturer | ON Semiconductor |
| Title | Bipolar Transistor |
| Description | Ordering number : ENA0279B 2SC6082 Bipolar Transistor 50V, 15A, Low VCE (sat) NPN TO-220F-3SG http://onsemi.com Applications • High-speed switching applications (switching regulator, driver circuit) Features • Adoption of MBIT process • Low collector-to-emitter saturation voltage • Large curren. |
| Features |
• Adoption of MBIT process • Low collector-to-emitter saturation voltage • Large current capacitance • High-speed switching Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current VCBO VCES VCEO VEBO IC ICP IB Collector Dissipation PC Junction. |
| Part Number | 2SC6082 |
| Manufacturer | INCHANGE |
| Title | TO-220F NPN Transistor |
| Description | ·Large current capacitance ·High speed switching ·Low saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO . |
| Features | MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 7.5A; IB= 0.375A VBE(sat) Base-Emitter Saturation Voltage IC= 7.5A; IB= 0.375A ICBO Collector Cutoff Current VCB= 40V; IE= 0 hFE-1 DC Current Gain IC= 330mA; VCE= 2V hFE-2 DC Current Gain IC= 10A; VCE= 2V tstg Storage Time tf Fall Time IC= 5A, IB1= 0.25A; IB2= -0.25A 0.4 V 1.2 V 10 μA 200 560 50 560 ns 37 ns . |
similar datasheet
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| 1 | 2SC6080 |
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| 2 | 2SC6081 |
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| 4 | 2SC6083A |
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| 7 | 2SC6089 |
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| 8 | 2SC6000 |
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| 9 | 2SC6010 |
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| 10 | 2SC6011 |
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Desde 2024. D4U Semiconductor.
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