2SC6082 INCHANGE TO-220F NPN Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

2SC6082

INCHANGE
2SC6082
2SC6082 2SC6082
zoom Click to view a larger image
Part Number 2SC6082
Manufacturer INCHANGE
Description ·Large current capacitance ·High speed switching ·Low saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High s...
Features MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 7.5A; IB= 0.375A VBE(sat) Base-Emitter Saturation Voltage IC= 7.5A; IB= 0.375A ICBO Collector Cutoff Current VCB= 40V; IE= 0 hFE-1 DC Current Gain IC= 330mA; VCE= 2V hFE-2 DC Current Gain IC= 10A; VCE= 2V tstg Storage Time tf Fall Time IC= 5A, IB1= 0.25A; IB2= -0.25A 0.4 V 1.2 V 10 μA 200 560 50 560 ns 37 ns NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications...

Document Datasheet 2SC6082 Data Sheet
PDF 175.22KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SC6080
Sanyo Semicon Device
NPN Epitaxial Planar Silicon Transistor Datasheet
2 2SC6081
Sanyo Semicon Device
NPN Epitaxial Planar Silicon Transistor Datasheet
3 2SC6082
Sanyo Semicon Device
NPN Epitaxial Planar Silicon Transistor Datasheet
4 2SC6082
ON Semiconductor
Bipolar Transistor Datasheet
5 2SC6082
INCHANGE
TO-252 NPN Transistor Datasheet
6 2SC6082
INCHANGE
TO-263 NPN Transistor Datasheet
More datasheet from INCHANGE
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad