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| Part Number | 2SC5387 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC5387 |
| Manufacturer | Inchange |
| Title | Silicon NPN Power Transistor |
| Description | ·High Breakdown Voltage- : VCBO= 1200V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Horizontal deflection output for high resolution display, color TV. ·High speed switchi. |
| Features | wise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 600 V VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A 1.5 V ICBO Collector Cutoff Current VCB= 1200V; IE= 0 1 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current. |
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