Busque con el número de pieza junto con el fabricante o la descripción
2SC5387 |
Click to view a larger image
| Part Number | 2SC5387 |
| Manufacturer | Inchange |
| Description | ·High Breakdown Voltage- : VCBO= 1200V (Min) ·High Switching Speed ·Low Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation A... |
| Features |
wise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
600
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A
3.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 8A; IB= 2A
1.5
V
ICBO
Collector Cutoff Current
VCB= 1200V; IE= 0
1
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10 μA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
15
35
hFE-2
DC Current Gain
IC= 8A ; VCE= 5V
4.3
7.8
fT
Current-Gain—Bandwidth Product
IC= 0.1A ; VCE= 10V
1.7
MHz
COB
Output Capacitance
tstg
Storage Time
tf
... |
| Document |
 2SC5387 Data Sheet
PDF 181.30KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC5380 |
Panasonic Semiconductor |
Silicon NPN triple diffusion mesa type Power Transistor |
|
| 2 | 2SC5380A |
Panasonic Semiconductor |
Silicon NPN triple diffusion mesa type Power Transistor |
|
| 3 | 2SC5381 |
Panasonic Semiconductor |
NPN Transistor |
|
| 4 | 2SC5382 |
Shindengen Electric Mfg.Co.Ltd |
NPN TRANSISTOR |
|
| 5 | 2SC5382 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SC5382 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|