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| Part Number | 2SC4135 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC4135 |
| Manufacturer | Sanyo Semicon Device |
| Title | PNP/NPN Epitaxial Planar Silicon Transistors |
| Description | Ordering number:ENN2511A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1593/2SC4135 High-Voltage Switching Applications Applications · Power supplies, relay derivers, lamp drivers. Features · Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching . |
| Features |
· Adoption of FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching speed. · Small and slim package permitting 2SA1593/ 2SC4135-applied sets to be made more compact. Package Dimensions unit:mm 2045B [2SA1593/2SC4135] 6.5 5.0 2.3 4 0.5 5.5 1.5 7.0 unit:mm 2044B 0.85 0.7 0.6 12 3 2.3 2.3 0.8 1.6 7.5 1.2 0.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector . |
| Part Number | 2SC4135 |
| Manufacturer | Kexin |
| Title | Transistors |
| Description | SMD Type High-Voltage Switching Applications 2SC4135 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High breakdown voltage and large current capacity. Fast switching speed. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 . |
| Features | High breakdown voltage and large current capacity. Fast switching speed. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Col. |
| Part Number | 2SC4135 |
| Manufacturer | ON Semiconductor |
| Title | Bipolar Transistor |
| Description | Ordering number : EN2511B 2SA1593/2SC4135 Bipolar Transistor (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single TP/TP-FA http://onsemi.com Applications • Power supplies, relay derivers, lamp drivers Features • Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • F. |
| Features |
• Adoption of FBET, MBIT processes • High breakdown voltage and large current capacity • Fast switching speed • Small and slim package permitting 2SA1593/2SC4135-applied sets to be made more compact Specifications ( ): 2SA1593 Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC4130 |
Sanken electric |
Silicon NPN Transistor |
|
| 2 | 2SC4130 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC4130 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC4131 |
Sanken electric |
Silicon NPN Transistor |
|
| 5 | 2SC4131 |
INCHANGE |
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|
| 6 | 2SC4131 |
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|
| 7 | 2SC4132 |
Rohm |
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|
| 8 | 2SC4132 |
Kexin |
NPN Epitaxial Planar Silicon Transistors |
|
| 9 | 2SC4133 |
Sanyo |
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|
| 10 | 2SC4134 |
Inchange Semiconductor |
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|
Desde 2024. D4U Semiconductor.
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