2SC4134 Datasheet. existencias, precio

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2SC4134 Bipolar Transistor

2SC4134


2SC4134
Part Number 2SC4134
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2SC4134

Inchange Semiconductor
2SC4134
Part Number 2SC4134
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistor
Description ·High voltage and large current capacity ·Fast-speed switching ·Small and slim package permitting 2SC4134-applied sets to be made more compact ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power supplies,relay drivers,lamp d.
Features r-Emitter Saturation Voltage IC= 0.4A; IB= 40mA VBE(sat) Base-Emitter Saturation Voltage IC= 0.4A; IB= 40mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC= 0 ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 0.1A; VCE= 5V COB Output Capacitance IE= 0; V.

2SC4134

Kexin
2SC4134
Part Number 2SC4134
Manufacturer Kexin
Title Transistors
Description SMD Type High-Voltage Switching Applications 2SC4134 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High breakdown voltage and large current capacity. Fast switching speed. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 .
Features High breakdown voltage and large current capacity. Fast switching speed. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Col.

2SC4134

Sanyo Semicon Device
2SC4134
Part Number 2SC4134
Manufacturer Sanyo Semicon Device
Title PNP/NPN Epitaxial Planar Silicon Transistors
Description Ordering number:ENN2510A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1592/2SC4134 High-Voltage Switching Applications Applications · Power supplies, relay drivers, lamp drivers. Features · Adoption FBET, MBIT processes. · High breakdown voltage and large current capacity. · Fast switching spee.
Features
· Adoption FBET, MBIT processes.
· High breakdown voltage and large current capacity.
· Fast switching speed.
· Small and slim package permitting 2SA1592/ 2SC4134-applied sets to be made more compact. Package Dimensions unit:mm 2045B [2SA1592/2SC4134] 6.5 5.0 2.3 4 0.5 5.5 1.5 7.0 unit:mm 2044B 0.85 0.7 0.6 12 3 2.3 2.3 0.8 1.6 7.5 1.2 0.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector SAN.

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