Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC4003 |
| Part Number | 2SC4003 |
| Manufacturer | GME |
| Title | NPN Epitaxial Planar Silicon Transistor |
| Description | NPN Epitaxial Planar Silicon Transistor FEATURES High hFE hFE=60 to 200. Low VCE(sat)=0.6V. Pb Lead-free Production specification 2SC4003 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO Collector-Base . |
| Features |
High hFE hFE=60 to 200. Low VCE(sat)=0.6V. Pb Lead-free Production specification 2SC4003 TO-251 TO-252 MAXIMUM RATING operating temperature range applies unless otherwise specified Symbol Parameter Value Units VCBO VCEO Collector-Base Volage Collector-Emitter Voltage 400 V 400 V VEBO Emitter-Base Voltage 5V IC Collector Current(DC) 0.2 A PC Collector Power Dissipation 1W Tj. |
2SC4003 |
| Part Number | 2SC4003 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·High hFE ·Low collector-to-emitter saturation voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage. |
| Features | or-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC= 0 ICBO Collector Cutoff Current VCB= 300V; IE= 0 IEBO Emitter Cutoff Current VEB=4V; IC= 0 hFE DC Current Gain IC= 50mA; VCE= 10V fT Current-Gain—Bandwidth Product IC= 10mA; VCE= 30V hFE Classifications D E 60-120 100-200 2SC4003 MIN TYP. MAX UNIT 0.6 V 1.0 V 400 V 400 V . |
2SC4003 |
| Part Number | 2SC4003 |
| Manufacturer | TRANSYS |
| Title | Plastic-Encapsulated Transistors |
| Description | Transys Electronics L I M I T E D www.DataSheet4U.com TO-251 Plastic-Encapsulated Transistors 2SC4003 TRANSISTOR (NPN) TO-251 FEATURES Power dissipation PCM: 1 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER Collector current 200 mA ICM: Collector-base voltage 400 V V(BR)CBO: Operating and stora. |
| Features | Power dissipation PCM: 1 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER Collector current 200 mA ICM: Collector-base voltage 400 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-o. |
2SC4003 |
| Part Number | 2SC4003 |
| Manufacturer | Sanyo Semicon Device |
| Title | Silicon NPN Transistor |
| Description | Ordering number : ENN2959B 2SC4003 2SC4003 NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Vol. |
| Features |
• High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Electrical Characte. |
2SC4003 |
| Part Number | 2SC4003 |
| Manufacturer | KEXIN |
| Title | NPN Triple Diffused Planar Silicon Transistor |
| Description | www.DataSheet4U.com SMD Type Transistors NPN Triple Diffused Planar Silicon Transistor 2SC4003 TO-252 +0.15 1.50 -0.15 Unit: mm +0.1 2.30-0.1 +0.8 0.50-0.7 Features High breakdown voltage +0.2 9.70 -0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 Excellent hFE linearity 0.. |
| Features | High breakdown voltage +0.2 9.70 -0.2 +0.15 6.50-0.15 +0.2 5.30-0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 Excellent hFE linearity 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC. |
2SC4003 |
| Part Number | 2SC4003 |
| Manufacturer | LGE |
| Title | NPN Transistor |
| Description | 2SC4003(NPN) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 1 23 3. EMITTER Features High hFE hFE=60 to 200 low VCE(sat) VCE(sat)=0.6V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage C. |
| Features | High hFE hFE=60 to 200 low VCE(sat) VCE(sat)=0.6V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) TO-252-2L Symbol Parameter Value Units VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature 400 400 5 0.2 1 150 -55-150 V V V A W ℃ ℃ Dimension. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC400 |
Toshiba |
SILICON PNP TRANSISTOR |
|
| 2 | 2SC4001 |
NEC |
Silicon NPN Transistor |
|
| 3 | 2SC4001 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | 2SC4002 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 5 | 2SC4002 |
ON Semiconductor |
NPN Triple Diffused Planar Silicon Transistor |
|
| 6 | 2SC4002 |
SEMTECH |
NPN Silicon Triple Diffused Planar Transistor |
|
| 7 | 2SC4002 |
Bluecolour |
NPN Silicon Triple Diffused Planar Transistor |
|
| 8 | 2SC4004 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 9 | 2SC4004 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC4004 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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