Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC4002 |
| Part Number | 2SC4002 |
| Manufacturer | SEMTECH |
| Title | NPN Silicon Triple Diffused Planar Transistor |
| Description | ST 2SC4002 NPN Silicon Triple Diffused Planar Transistor for High-Voltage Driver Applications. The transistor is subdivided into two groups, D and E, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. TO-92 Plastic Package We. |
| Features | B=5mA Base Emitter Saturation Voltage at IC=50mA, IB=5mA Gain Bandwidth Product at VCE=30V, IC=10mA Symbol hFE hFE ICBO IEBO VCE(sat) VBE(sat) fT Min. 60 100 - G S P FORM A IS AVAILABLE Typ. 70 Max. 120 200 0.1 0.1 0.6 1.0 - Unit - µA µA V V MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Semtech International Holdings Limited, acompany listed on the Hong Kong Stock Exchange, Stock Code: 724) ®. |
2SC4002 |
| Part Number | 2SC4002 |
| Manufacturer | Bluecolour |
| Title | NPN Silicon Triple Diffused Planar Transistor |
| Description | 2SC4002 NPN Silicon Triple Diffused Planar Transistor for High-Voltage Driver Applications. The transistor is subdivided into two groups, D and E, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. Absolute Maximum Ratings (T. |
| Features | dth Product at VCE=30V, IC=10mA Symbol hFE hFE ICBO IEBO VCE(sat) VBE(sat) fT Min. 60 100 - Typ. 70 Max. 120 200 0.1 0.1 0.6 1.0 - Unit μA μA V V MHz Page 2 of 2 7/15/2011 . |
2SC4002 |
| Part Number | 2SC4002 |
| Manufacturer | ON Semiconductor |
| Title | NPN Triple Diffused Planar Silicon Transistor |
| Description | 2SC4002 Ordering number : ENN2960A 2SC4002 NPN Triple Diffused Planar Silicon Transistor High-Voltage Driver Applications Features • High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Vol. |
| Features |
• High breakdown voltage. • Adoption of MBIT process. • Excellent hFE linearity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics a. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC400 |
Toshiba |
SILICON PNP TRANSISTOR |
|
| 2 | 2SC4001 |
NEC |
Silicon NPN Transistor |
|
| 3 | 2SC4001 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 4 | 2SC4003 |
GME |
NPN Epitaxial Planar Silicon Transistor |
|
| 5 | 2SC4003 |
Sanyo Semicon Device |
Silicon NPN Transistor |
|
| 6 | 2SC4003 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 7 | 2SC4003 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 8 | 2SC4003 |
TRANSYS |
Plastic-Encapsulated Transistors |
|
| 9 | 2SC4003 |
KEXIN |
NPN Triple Diffused Planar Silicon Transistor |
|
| 10 | 2SC4003 |
LGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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