Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2SC388 |
| Distributor | Stock | Price | Buy |
|---|
2SC388 |
| Part Number | 2SC388 |
| Manufacturer | JCST |
| Title | NPN TRANSISTOR |
| Description | IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 15A, TC = 100°C tsc > 5µs, Tjmax = 175°C G E E G G C C C C E VCE(on) typ. = 1.55V @ 8A n-channel G D2-Pak IRGS4615DPbF TO-220AB IRGB4615DPbF C E Applications • Appliance Drives •. |
| Features | Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Lead-free, RoHS compliant Gate Collector Em itter → Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher . |
2SC388 |
| Part Number | 2SC388 |
| Manufacturer | KOO CHIN |
| Title | NPN Transistor |
| Description | 2SC388 TRANSISTOR (NPN) FEATURES TV final pictureif amplifier applications TO-92 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. COLLECTOR Symbol VCBO Parameter Collector-Emitter Voltage Value 30 Units V 3. BASE VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage. |
| Features | TV final pictureif amplifier applications TO-92 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) 2. COLLECTOR Symbol VCBO Parameter Collector-Emitter Voltage Value 30 Units V 3. BASE VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 4V IC Collector Current -Continuous 50 mA Pc Collector Power dissipation 300 mW Tj Junction Temperature Tstg Storage Temperatu. |
2SC388 |
| Part Number | 2SC388 |
| Manufacturer | Secos |
| Title | NPN Plastic-Encapsulated Transistor |
| Description | IRGS4615DPbF IRGB4615DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 15A, TC = 100°C tsc > 5µs, Tjmax = 175°C G E E G G C C C C E VCE(on) typ. = 1.55V @ 8A n-channel G D2-Pak IRGS4615DPbF TO-220AB IRGB4615DPbF C E Applications • Appliance Drives •. |
| Features | Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Positive VCE(ON) temperature coefficient and tighter distribution of parameters 5μs short circuit SOA Lead-free, RoHS compliant Gate Collector Em itter → Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and higher . |
2SC388 |
| Part Number | 2SC388 |
| Manufacturer | USHA |
| Title | Transistors |
| Description | IRGS4620DPbF IRGB4620DPbF IRGP4620D(-E)PbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V IC = 20A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.55V @ IC = 12A Applications • Appliance Drive • Inverters • UPS G E C C C G G C G E E C G IRGB4620DPbF TO. |
| Features | Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C Benefits High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and high power capability Positive VCE (ON) temperature coefficient and tight distribution Excellent current sharing in parallel operation of parameters 5µs Short Circu. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC380 |
HAOCHANG |
NPN Transistor |
|
| 2 | 2SC380 |
SEMTECH |
NPN Transistor |
|
| 3 | 2SC3802K |
Rohm |
Epitaxial Planar NPN Silicon Transistor |
|
| 4 | 2SC3803 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC3803 |
Kexin |
Transistor |
|
| 6 | 2SC3805 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
| 7 | 2SC3807 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 8 | 2SC3807 |
WEJ |
TRANSISTOR |
|
| 9 | 2SC3807 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 10 | 2SC3807 |
JCET |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|