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2SC3807 TRANSISTOR Datasheet


2SC3807

WEJ
2SC3807

Part Number 2SC3807
Manufacturer WEJ
Description RoHS 2SC3807 2SC3807 FEATURES Power dissipation PCM: TRANSISTOR (NPN) TO-126C 1.25 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER Collector cu...
Features Power dissipation PCM: TRANSISTOR (NPN) TO-126C 1.25 W (Tamb=25℃) 1. BASE 2. COLLECTOR 3. EMITTER Collector current ICM: 2 A Collector-base voltage V(BR)CBO: 30 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-ba...

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2SC3807

Sanyo Semicon Device
2SC3807
Part Number 2SC3807
Manufacturer Sanyo Semicon Device
Title NPN Epitaxial Planar Silicon Transistor
Description www.DataSheet.co.kr Ordering number:EN2018A NPN Epitaxial Planar Silicon Transistor 2SC3807 High hFE, Low-Frequency General-Purpose Amplifier A.
Features
· Large current capacity (IC=2A).
· Adoption of MBIT process.
· High DC current gain (hFE=800 to 3200).
· Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V).
· High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitte.

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2SC3807

JCET
2SC3807
Part Number 2SC3807
Manufacturer JCET
Title NPN Transistor
Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SC3807 TRANSISTOR (NPN) TO-126 FEATURES z Low freque.
Features z Low frequency power amplifier z Large current capacity z High DC current gain z Low collector-to-emitter saturation voltage z High VEBO MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Emitter Voltage 30 V VCEO Collector-Emitter Voltage 25 V VE.

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2SC3807

BLUE ROCKET ELECTRONICS
2SC3807
Part Number 2SC3807
Manufacturer BLUE ROCKET ELECTRONICS
Title Silicon NPN transistor
Description TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package.  / Features IC ,hFE ,VCE(sat),VEBO 。 Large current capacity, high DC cur.
Features IC ,hFE ,VCE(sat),VEBO 。 Large current capacity, high DC current gain, Low collector-to-emitter saturation voltage High VEBO. / Applications 。 low frequency general-purpose amplifiers, drivers. / Equivalent Circuit / Pinning 12 3 PIN1:Emitter PIN 2:Collector PIN 3:Base / hFE Classific.

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2SC3807

Foshan Eming Electronics
2SC3807
Part Number 2SC3807
Manufacturer Foshan Eming Electronics
Title SILICON NPN TRANSISTOR
Description 2SC3807(3DA3807) NPN /SILION NPN TRANSISTOR :。 Purpose: low frequency general-purpose amplifiers, drivers. : IC , hFE ,VCE(sat),VEBO 。 Features.
Features Large current capacity, high DC current gain, Low collector-to-emitter saturation voltage High VEBO. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO VCEO VEBO IC ICM PC PC(TC=25℃) Tj Tstg 30 25 15 2.0 4.0 1.2 15 150 -55~150 V V V A A W W ℃ ℃ /Electrical characteristics(Ta=25.

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