Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC3518-Z |
| Part Number | 2SC3518-Z |
| Manufacturer | Kexin |
| Title | NPN Transistor |
| Description | SMD Type NPN Silicon Epitaxia 2SC3518-Z TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 High DC current gain. 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.. |
| Features | Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 High DC current gain. 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pu. |
2SC3518-Z |
| Part Number | 2SC3518-Z |
| Manufacturer | Renesas |
| Title | SILICON POWER TRANSISTOR |
| Description | The 2SC3518-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEATURES • High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. • Complement to 2SA1385-Z ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO . |
| Features |
• High DC Current Gain hFE = 100 to 400 • Low VCE(sat): VCE(sat) = 0.09 V TYP. • Complement to 2SA1385-Z ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 60 V Emitter to Base Voltage VEBO 7 V Collector Current (DC) IC(DC) 5 A Collector Current (pulse) Note 1 IC(pulse) 7 A Total Power Dissipation (TA = 25°C) Note 2 PT . |
2SC3518-Z |
| Part Number | 2SC3518-Z |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Low collector saturation voltage ·High DC current gain ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This transistor is ideal for audio frequency amplifier and switching especially in hybrid integrated circuits ABSOLUTE MA. |
| Features | (sat)NOTE Collector-Emitter Saturation Voltage IC= 2A; IB= 200mA VBE(sat)NOTE Base-Emitter Saturation Voltage IC= 2A; IB= 200mA ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1NOTE DC Current Gain IC= 5A; VCE= 1V hFE-2NOTE DC Current Gain IC= 2A; VCE= 1V fTNOTE Current-Gain—Bandwidth Product IC= 500mA; VCE= 10V NOTE:Pulse test PW≤350us. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3518 |
INCHANGE |
NPN Power Transistor |
|
| 2 | 2SC3518 |
Renesas |
Silicon Power Transistors |
|
| 3 | 2SC3510 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 4 | 2SC3512 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 5 | 2SC3512 |
Renesas |
Silicon NPN Transistor |
|
| 6 | 2SC3512 |
Inchange Semiconductor |
Silicon NPN RF Transistor |
|
| 7 | 2SC3513 |
Hitachi Semiconductor |
Silicon NPN Transistor |
|
| 8 | 2SC3513 |
Kexin |
Silicon NPN Epitaxial Transistor |
|
| 9 | 2SC3514 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 10 | 2SC3515 |
Toshiba Semiconductor |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|