2SC3513 Transistor Datasheet, Distribuidor, stock y mejor precio

2SC3513

Part Number	2SC3513
Manufacturer	Hitachi Semiconductor
Title	Silicon NPN Transistor
Description	2SC3513 Silicon NPN Epitaxial Application UHF / VHF wide band amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC3513 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipati.
Features	B = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz 2 2SC3513 Typical Output Characteristics Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 150 Collector Current IC (mA) 20 180 160 140 120 12 100 80 8 60 40 4 IB = 20 µA 16 100 50 0 50 100 150 Ambient Temperature Ta (°C) 0 2 4 6 8 10 Collector to Emi.

No.	Parte #	Fabricante	Descripción
1	2SC3510	Hitachi Semiconductor	Silicon NPN Transistor
2	2SC3512	Hitachi Semiconductor	Silicon NPN Transistor
3	2SC3512	Renesas	Silicon NPN Transistor
4	2SC3512	Inchange Semiconductor	Silicon NPN RF Transistor
5	2SC3514	Inchange Semiconductor	Silicon NPN Power Transistor
6	2SC3515	Toshiba Semiconductor	Silicon NPN Transistor
7	2SC3515	Kexin	Transistor
8	2SC3518	INCHANGE	NPN Power Transistor
9	2SC3518	Renesas	Silicon Power Transistors
10	2SC3518-Z	NEC	NPN Transistor