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2SC3177 |
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| Part Number | 2SC3177 |
| Manufacturer | INCHANGE |
| Description | ·With TO-126 packaging ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Relay drivers ·High-speed inverters ·Converters ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1. |
| Features | Collector-Emitter Saturation Voltage IC= 5mA; IB=0.5mA VBE(sat) Base-Emitter Saturation Voltage IC= 5mA; IB=0.5mA ICBO Collector Cutoff Current VCB= 10V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE DC Current Gain IC= 5mA ; VCE= 4V 2SC3177 MIN TYP. MAX UNIT 15 V 15 V 3 V 2.0 V 1.5 V 1.0 μA 1.0 μA 200 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in gener. |
| Datasheet |
 2SC3177 Data Sheet
PDF 206.99KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3170 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC3170 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC3171 |
INCHANGE |
NPN Transistor |
|
| 4 | 2SC3171 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC3172 |
Toshiba |
Silicon NPN Transistor |
|
| 6 | 2SC3173 |
Sanyo Semicon Device |
NPN Transistor |
|
| 7 | 2SC3174 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 8 | 2SC3175 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC3176 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 10 | 2SC3178 |
ETC |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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