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2SC3172 Silicon NPN Transistor Datasheet


2SC3172

Toshiba
2SC3172

Part Number 2SC3172
Manufacturer Toshiba (https://www.toshiba.com/)
Description SILICON NPN EPITAXIAL PLANAR TYPE TV VHF MIXER APPLICATIONS. FEATURES . High Conversion Gain : G ce=26dB (Typ.) . Low Reverse Transfer Capacitance...
Features . High Conversion Gain : G ce=26dB (Typ.) . Low Reverse Transfer Capacitance : C re=0.4pF (Typ.) 2SC3172 Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Tem...

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2SC3179

INCHANGE
2SC3179
Part Number 2SC3179
Manufacturer INCHANGE
Title NPN Transistor
Description ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 0.6V(Max.)@IC= 2A ·Complement to Type 2S.
Features ) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A ICBO Collector Cutoff Current VCB= 80V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 1A; VCE= 4V fT Current-Gain—Bandwidth Product IE= -0.2A; VCE= 12V COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MH.

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2SC3179

SavantIC
2SC3179
Part Number 2SC3179
Manufacturer SavantIC
Title SILICON POWER TRANSISTOR
Description ·With TO-220 package ·Complement to type 2SA1262 ·Low collector saturation voltage APPLICATIONS ·Audio and general purpose applications PINNING PI.
Features r cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=25mA ,IB=0 IC=2A; IB=0.2 A VCB=80V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=4V IE=-0.2A ; VCE=12V f=1MHz ; VCB=10V 40 MIN 60 2SC3179 SYMBOL V(BR)CEO VCE(sat) ICBO IEBO hFE fT COB TYP. MAX UNIT V 0.6 100 100 V µA µA .

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2SC3179

Sanken electric
2SC3179
Part Number 2SC3179
Manufacturer Sanken electric
Title Silicon NPN Transistor
Description 2SC3179 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1262) sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB.
Features ) (V ) 4 00 m A 80m A V CE ( sa t )
  – I B Characteristics (Typical) I C
  – V BE Temperature Characteristics (Typical) 4 (V CE =4V) IB =1 60mA Collector Current I C (A) 40mA 30mA 2 20mA Collector Current I C (A) 3 1.0 3 2 p) em ) mp Te se C( eT (C 12 25˚ I C =1 A 0 0 1 2 3 4 .

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2SC3178

Fujitsu Media Devices
2SC3178
Part Number 2SC3178
Manufacturer Fujitsu Media Devices
Title (2SC3178 / 2SC3059 - 2SC3061) Silicon High Speed Power Transistor
Description This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By I.
Features .

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2SC3178

ETC
2SC3178
Part Number 2SC3178
Manufacturer ETC
Title NPN Transistor
Description .
Features .

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