Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2SC3026 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC3026 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-voltage power switching character display horizontal d. |
| Features | V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 ICES Collector Cutoff Current VCE= 1700V; RBE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A Switching times tstg Storage Time tf Fall Time IC= 5A, IB1= 1A; IB2= -2.5A 2SC3026 MIN TYP. . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3020 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 2 | 2SC3021 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 3 | 2SC3022 |
Mitsubishi Electric Semiconductor |
NPN Transistor |
|
| 4 | 2SC3022 |
HGSemi |
HG RF POWER TRANSISTOR |
|
| 5 | 2SC3025 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC3025 |
SavantIC |
Silicon power Transistor |
|
| 7 | 2SC3000 |
Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
|
| 8 | 2SC3001 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 9 | 2SC3006 |
Toshiba Semiconductor |
Silicon NPN epitaxial planer type Transistor |
|
| 10 | 2SC3007 |
Toshiba |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|