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2SC3026 |
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| Part Number | 2SC3026 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max)@ IC= 5A ·Minimum Lot-to-Lot variations for robust device performance and reliab... |
| Features |
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= ∞
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
ICES
Collector Cutoff Current
VCE= 1700V; RBE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 1.25A
Switching times
tstg
Storage Time
tf
Fall Time
IC= 5A, IB1= 1A; IB2= -2.5A
2SC3026
MIN TYP. MAX UNIT
800
V
6
V
0.5 mA
2.0
V
1.5
V
4
μs
0.5 μs
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information con... |
| Document |
 2SC3026 Data Sheet
PDF 185.31KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC3020 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 2 | 2SC3021 |
Mitsubishi Electric Semiconductor |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 3 | 2SC3022 |
Mitsubishi Electric Semiconductor |
NPN Transistor |
|
| 4 | 2SC3022 |
HGSemi |
HG RF POWER TRANSISTOR |
|
| 5 | 2SC3025 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC3025 |
SavantIC |
Silicon power Transistor |
|
Desde 2024. D4U Semiconductor.
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