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2SC2868 |
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| Part Number | 2SC2868 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | 2SC2B68 SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. FEATURES . High Breakdown Voltage : Vceo= 80V . Low Noise Figure : NF=ldB (Typ . ) , 10dB(Max.) . Excellent hFE Linearity: hFE(0.1mA)/hFE(2mA)=0.90(Typ, • Complementary to 2SA1158. _&1MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHA. |
| Features |
. High Breakdown Voltage : Vceo= 80V . Low Noise Figure : NF=ldB (Typ . ) , 10dB(Max.) . Excellent hFE Linearity: hFE(0.1mA)/hFE(2mA)=0.90(Typ, • Complementary to 2SA1158. _&1MAX. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING VCBO 80 VCEO 80 VEBO ic 100 IB 50 PC 400 ^stg 125 -55-125 UNIT 1.27 to * d 1.27 1. EMITTER 2. COLLECTOR a BASE mA mA EIAJ mW TOSHIBA SC—4 3 2-5P1B Weight . |
| Datasheet |
 2SC2868 Data Sheet
PDF 99.69KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2860 |
Panasonic Semiconductor |
Si NPN Epitaxial Planar Transistor |
|
| 2 | 2SC2869 |
NEC |
NPN Silicon Transistor |
|
| 3 | 2SC2800 |
Mitsubishi Electric |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 4 | 2SC2804 |
Toshiba |
Silicon NPN Transistor |
|
| 5 | 2SC2805 |
Toshiba |
Silicon NPN Transistor |
|
| 6 | 2SC2806 |
Toshiba |
Silicon NPN Transistor |
|
| 7 | 2SC2808 |
Rohm |
Epitaxial Planar NPN Silicon Transistor |
|
| 8 | 2SC2809 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SC2809 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SC2810 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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