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2SC2810 SILICON POWER TRANSISTOR

2SC2810

2SC2810
2SC2810 2SC2810
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Part Number 2SC2810
Manufacturer SavantIC
Description With TO-220C package ·High voltage,High speed APPLICATIONS ·For power switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector curre.
Features ut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=3A; IB=0.6A IC=3A; IB=0.6A VCB=500V ;IE=0 VEB=7V; IC=0 IC=3A ; VCE=4V IC=0.5A ; VCE=12V 10 MIN 400 500 7 2SC2810 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE fT TYP. MAX UNIT V V V 0.5 1.3 10 10 V V µA µA 18 MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2810 Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 .
Datasheet Datasheet 2SC2810 Data Sheet
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2SC2810

Inchange Semiconductor
2SC2810
Part Number 2SC2810
Manufacturer Inchange Semiconductor
Title Silicon NPN Power Transistors
Description ·Low Collector Saturation Voltage ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in humidifier , DC/DC converter and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE U.
Features n Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A ICBO Collector Cutoff Current VCB= 500V; IE= 0 IEBO Emitter Cutoff Current VEB=7V; IC= 0 hFE DC Current Gain IC= 3A ; VCE= 4V fT Current-Gain—Bandwidth Product IE= 0.5A ; VCE= 12V MIN TYP. MAX UNIT 400 V 0.5 V 1.3 V 100 μA 100 μ.


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