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2SC2793 |
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| Part Number | 2SC2793 |
| Manufacturer | SavantIC |
| Description | ·With MT-200 package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·High speed and high voltage switching ·Switching regulator ·High speed DC-DC converter PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL . |
| Features | tter breakdown voltage Collector-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ;IB=0 IC=1mA ;IE=0 IC=3 A;IB=0.6 A IC=3 A;IB=0.6 A VCB=800V; IE=0 VEB=7V; IC=0 IC=10mA ; VCE=5V IC=3A ; VCE=5V 10 10 MIN 800 900 2SC2793 SYMBOL V(BR)CEO V(BR)CBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V V 1.0 1.5 100 1 V V µA mA Switching times tr tstg tf Rise time Storage time Fall time VCC=400V ,IC=3A, IB1=0.3A;IB2=-0.8A 1.0 3.5 1.0 µs µs µs 2 S. |
| Datasheet |
 2SC2793 Data Sheet
PDF 149.33KB |
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2SC2793 |
| Part Number | 2SC2793 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | · ·With MT-200 package ·High power dissipation ·High current capability ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·High speed and high voltage switching applications ·Switching regulator applications ·High speed D. |
| Features | ITIONS V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 VCEsat Collector-emitter saturation voltage IC=3A; IB=0.6A VBEsat Base-emitter saturation voltage IC=3A; IB=0.6A ICBO Collector cut-off current VCB=900V; IE=0 IEBO Emitter cut-off current VEB=7V; IC=0 hFE-1 DC current gain IC=10mA ; VCE=5V hFE-2 DC current gain. |
2SC2793 |
| Part Number | 2SC2793 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | SILICON NPN TRIPLE DIFFUSED TYPE HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. FEATURES . Excellent Switching Times : t r =1.0/is (Max.), tf=1.0 >us (Max.) (Ic=3A) . High Collector Breakdown Voltage : Vcgo= 800V INDUS. |
| Features | . Excellent Switching Times : t r =1.0/is (Max.), tf=1.0 >us (Max.) (Ic=3A) . High Collector Breakdown Voltage : Vcgo= 800V INDUSTRIAL APPLICATION Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 900 Collector-Emitter Voltage VcEO 800 Emitter-Base Voltage v EBO Collector Current DC Peak Base Current Collector Power Dissipation (Tc=25. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2790 |
Toshiba |
Silicon NPN Transistor |
|
| 2 | 2SC2791 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC2791 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | 2SC2791 |
Toshiba |
Silicon NPN Transistor |
|
| 5 | 2SC2792 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SC2792 |
Toshiba |
Silicon NPN Transistor |
|
| 7 | 2SC2794 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SC2794 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC2798 |
Mitsubishi |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 10 | 2SC2703 |
Toshiba Semiconductor |
Silicon NPN TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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