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2SC2791 |
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| Part Number | 2SC2791 |
| Manufacturer | SavantIC |
| Description | ·With TO-3 package ·High collector breakdown voltage ·Excellent switching times APPLICATIONS ·High speed and high voltage switching ·Switching regulator ·High speed DC-DC converter PINNING(see Fig.2) PIN 1 2 3 Base Emitter DESCRIPTION 2SC2791 Fig.1 simplified outline (TO-3) and symbol Collector ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC IB . |
| Features | er breakdown voltage IC=10mA ;IB=0 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 900 V VCE(sat) VBE(sat) ICBO Collector-emitter saturation voltage IC=3A; IB=0.6A 1.0 V Base-emitter saturation voltage IC=3A; IB=0.6A 1.5 V Collector cut-off current VCB=800V; IE=0 100 µA IEBO Emitter cut-off current VEB=7V; IC=0 1 mA hFE-1 DC current gain IC=10mA ; VCE=5V 10 hFE-2 DC current gain IC=3A ; VCE=5V 10 Switching times tr tstg tf Rise time VCC=400V ,IC=3A, IB1=0.3A;IB2=-0.8A 1.0 µs Storage time 3.5 µs Fall time 1.0 µs 2 SavantIC Semiconducto. |
| Datasheet |
 2SC2791 Data Sheet
PDF 136.43KB |
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2SC2791 |
| Part Number | 2SC2791 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min.) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed and high voltage switching applications ·Switching regulator applications ·High speed DC-DC converter a. |
| Features | A; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.6A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.6A ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 10mA; VCE= 5V hFE-2 DC Current Gain IC= 3A; VCE= 5V Switching times tr Rise T. |
2SC2791 |
| Part Number | 2SC2791 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | : SILICON NPN TRIPLE DIFFUSED TYPE I 3 2SC2791 HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR APPLICATIONS. HIGH SPEED DC-DC CONVERTER APPLICATIONS. FEATURES . Excellent Switching Times : t r=1.0AS (Max.), t f =1.0AS (Max. ) (Ic=3A) . High Collector Breakdown Voltage : V. |
| Features | . Excellent Switching Times : t r=1.0AS (Max.), t f =1.0AS (Max. ) (Ic=3A) . High Collector Breakdown Voltage : Vceo=8 °0v Unit in mm ZteSOMAX , MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 900 V Collector-Emitter Voltage VcEO 800 V Emitter-Base Voltage Vebo 7 V Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2790 |
Toshiba |
Silicon NPN Transistor |
|
| 2 | 2SC2792 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC2792 |
Toshiba |
Silicon NPN Transistor |
|
| 4 | 2SC2793 |
INCHANGE |
NPN Transistor |
|
| 5 | 2SC2793 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SC2793 |
Toshiba |
Silicon NPN Transistor |
|
| 7 | 2SC2794 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SC2794 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC2798 |
Mitsubishi |
NPN EPITAXIAL PLANAR TYPE TRANSISTOR |
|
| 10 | 2SC2703 |
Toshiba Semiconductor |
Silicon NPN TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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