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2SC2707 |
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| Part Number | 2SC2707 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) ·High Power Dissipation ·Complement to Type 2SA1147 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Col. |
| Features | eakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A ICBO Collector Cutoff Current VCB= 180V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 1A ; VCE= 5V hFE-2 DC Current Gain IC= 5A ; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 12V 2SC2707 MIN TYP. MAX UNIT 180 V 180 V 5 V 3.0 V 100 μA 100 μA 55 160 30 10 MHz Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notificatio. |
| Datasheet |
 2SC2707 Data Sheet
PDF 189.94KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2703 |
Toshiba Semiconductor |
Silicon NPN TRANSISTOR |
|
| 2 | 2SC2703 |
JCET |
NPN Transistor |
|
| 3 | 2SC2703 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 4 | 2SC2704 |
Toshiba |
Silicon NPN Transistor |
|
| 5 | 2SC2705 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 6 | 2SC2705 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC2705 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 8 | 2SC2706 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC2706 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC2706 |
Toshiba |
Silicon NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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