Busque con el número de pieza junto con el fabricante o la descripción
2SC2706 |
Click to view a larger image
| Part Number | 2SC2706 |
| Manufacturer | SavantIC |
| Description | ·With TO-3P(I) package ·High power dissipation APPLICATIONS ·For audio power amplifier and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3P(I)) and symbol DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collect. |
| Features | ff current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=25mA ,IB=0 IE=1mA ,IC=0 IC=5A; IB=0.5A VCB=140V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IC=1A ; VCE=5V 55 35 MIN 140 5 2SC2706 SYMBOL V(BR)CEO V(BR)EBO VCEsat ICBO IEBO hFE-1 hFE-2 fT TYP. MAX UNIT V V 2.0 10 10 160 V µA µA 90 MHz 2 SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC2706 Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 . |
| Datasheet |
 2SC2706 Data Sheet
PDF 148.86KB |
| Distributor | Stock | Price | Buy |
|---|
2SC2706 |
| Part Number | 2SC2706 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 140V(Min) ·Complement to Type 2SA1146 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Audio frequency low power amplifier applications ·Recommend for 70W audio frequency amplifier output stage applic. |
| Features | akdown Voltage IC= 50mA; IB= 0 140 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 2.0 V VBE(on) Base-Emitter On Voltage IC= 5A; VCE= 5V 2.5 V ICBO Collector Cutoff Current VCB= 140V; IE=0 50 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 50 μA hFE-1 DC Current Gain IC= 1A; VCE= 5V 55 240 hFE-2 DC Current Gain IC= 5A; VCE= 5V 30 COB Output Capacitance I. |
2SC2706 |
| Part Number | 2SC2706 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | : 2SC2706 )— SILICON NPN EPITAXIAL TYPE (PCT PROCESS) AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SA1146. . Recommended for 70W audio frequency amplifier output stage. . High transition frequency : f T=90MHz (Typ. 5, 9 MAX.. J. . Unit in mm a2±CL2 MAXIMUM RATING. |
| Features | . Complementary to 2SA1146. . Recommended for 70W audio frequency amplifier output stage. . High transition frequency : f T=90MHz (Typ. 5, 9 MAX.. J. . Unit in mm a2±CL2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25QC) Junction Temperature Storage Temperature Rang. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2703 |
Toshiba Semiconductor |
Silicon NPN TRANSISTOR |
|
| 2 | 2SC2703 |
JCET |
NPN Transistor |
|
| 3 | 2SC2703 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 4 | 2SC2704 |
Toshiba |
Silicon NPN Transistor |
|
| 5 | 2SC2705 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 6 | 2SC2705 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC2705 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 8 | 2SC2707 |
Inchange Semiconductor |
Power Transistor |
|
| 9 | 2SC2710 |
Toshiba Semiconductor |
Silicon NPN TRANSISTOR |
|
| 10 | 2SC2710 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
Desde 2024. D4U Semiconductor.
|