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| Part Number | 2SC2619 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC2619 |
| Manufacturer | Kexin |
| Title | Silicon NPN Epitaxial Type Transistor |
| Description | SMD Type Silicon NPN Epitaxial 2SC2619 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 +0.1 1.3-0.1 High frequency amplifier. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta =. |
| Features | +0.1 2.4-0.1 +0.1 1.3-0.1 High frequency amplifier. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating . |
| Part Number | 2SC2619 |
| Manufacturer | Hitachi Semiconductor |
| Title | Silicon NPN Transistor |
| Description | 2SC2619 Silicon NPN Epitaxial Application High frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC2619 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Ju. |
| Features | ain bandwidth product Collector output capacitance Noise figure Note: Grade Mark hFE V(BR)EBO I CBO I EBO hFE* 35 — — — — — VCE(sat) VBE fT Cob NF V V MHz pF dB I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 2 mA, f = 1 MHz, Rg = 500 Ω 1. The 2SC2619 is grouped by h FE as follows. A FA 35 to 75 B FB 60 to 120 C FC 100 to 200 S. |
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