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2SC2619 |
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| Part Number | 2SC2619 |
| Manufacturer | Hitachi Semiconductor |
| Description | 2SC2619 Silicon NPN Epitaxial Application High frequency amplifier Outline MPAK 3 1 2 1. Emitter 2. Base 3. Collector 2SC2619 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage C... |
| Features |
ain bandwidth product Collector output capacitance Noise figure Note: Grade Mark hFE V(BR)EBO I CBO I EBO hFE*
35 — — — — —
VCE(sat) VBE fT Cob NF
V V MHz pF dB
I C = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 2 mA, f = 1 MHz, Rg = 500 Ω
1. The 2SC2619 is grouped by h FE as follows. A FA 35 to 75 B FB 60 to 120 C FC 100 to 200
See characteristic curves of 2SC460.
2
2SC2619
Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 150
100
50
0
50 100 150 Ambient Temperature Ta (°C)
3
Unit: mm
0.65
0.10... |
| Document |
 2SC2619 Data Sheet
PDF 24.55KB |
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