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| Part Number | 2SC2335 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC2335 |
| Manufacturer | NEC |
| Title | SILICON POWER TRANSISTOR |
| Description | of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full r. |
| Features |
• Low collector saturation voltage: VCE(sat) = 1.0 V MAX. @IC = 3.0 A • Fast switching speed: tf = 1.0 µs MAX. @IC = 3.0 A • Wide base reverse-bias SOA: VCEX(SUS)1 = 450 V MIN. @IC = 3.0 A (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total. |
| Part Number | 2SC2335 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon NPN transistor |
| Description | TO-220 NPN 。Silicon NPN transistor in a TO-220 Plastic Package. / Features ，。 low collector saturation voltage, fast switching speed, wide base reverse-bias SOA. / Applications ,。 High-speed high-voltage converters, and high-frequency power amplifiers. / Equivalent Circuit / Pinning. |
| Features | ，。 low collector saturation voltage, fast switching speed, wide base reverse-bias SOA. / Applications ,。 High-speed high-voltage converters, and high-frequency power amplifiers. / Equivalent Circuit / Pinning 1 23 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 2SC2335 Rev.F Mar.-2016 DATA SHEET / Abs. |
| Part Number | 2SC2335 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220C package ·Collector-emitter sustaining voltage VCEO(sus)=400V(Min) ·Collector-emitter saturation voltage VCE(sat)=1.0V(Max.)@IC=3.0A,IB=0.6A ·Switching time-tf=1.0µs(Max.)@IC=3.0A APPLICATIONS ·Designed for use in high-voltage ,highspeed ,power switching in inductive circuit, particular. |
| Features | W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 3.125 UNIT /W SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Colle. |
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| 1 | 2SC2330 |
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| 2 | 2SC2330 |
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| 8 | 2SC2333 |
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| 9 | 2SC2334 |
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| 10 | 2SC2334 |
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Desde 2024. D4U Semiconductor.
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