Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2SC2334 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC2334 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220 package ·Complement to type 2SA1010 ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·DC/DC converters ·High frequency power amplifiers PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Ta=. |
| Features | r saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain CONDITIONS IC=5.0A ,IB=0.5A,L=1mH IC=5A; IB=0.5A IC=5A; IB=0.5A VCB=100V; IE=0 VCE=100V; VBE(off)=-1.5V Ta=125 VEB=5V; IC=0 IC=0.5A ; VCE=5V IC=3A ; VCE=5V IC=5A ; VCE=5V 40 40 20 MIN 100 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO. |
| Part Number | 2SC2334 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon NPN transistor |
| Description | TO-220 NPN 。Silicon NPN transistor in a TO-220 Plastic Package. / Features ，， 2SA1010 。 Low VCE(sat),fast switching speed, complementary pair with 2SA1010. / Applications ，、DC/DC 。 Use for high voltage high speed switching, for a drive in devices such as switching regulators, DC/DC conv. |
| Features | ，， 2SA1010 。 Low VCE(sat),fast switching speed, complementary pair with 2SA1010. / Applications ，、DC/DC 。 Use for high voltage high speed switching, for a drive in devices such as switching regulators, DC/DC converters, high frequency power amplifiers. / Equivalent Circuit / Pinning 12 3 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications S. |
| Part Number | 2SC2334 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Low Collector Saturation Voltage ·Fast Switching Speed ·Complement to Type 2SA1010 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reglat. |
| Features | CS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A ICBO Collector Cutoff Current VCB= 100V ; IE= 0 ICER Collector Cutoff Current ICEX Collector Cutoff Current IEBO Emitter Cutoff Cu. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2330 |
ETC |
NPN SILICON EPITAXIAL TRANSISTOR |
|
| 2 | 2SC2330 |
HGSemi |
HG RF POWER TRANSISTOR |
|
| 3 | 2SC2331 |
NEC |
Silicon Power Transistor |
|
| 4 | 2SC2331 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC2331 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC2333 |
NEC |
PNP Transistor |
|
| 7 | 2SC2333 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SC2333 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC2335 |
NEC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC2335 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|