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| Part Number | 2SC2230A |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC2230A |
| Manufacturer | JIANGSU CHANGJIANG |
| Title | (2SC2230/A) NPN Transistor |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 1. EMITTER 2SC2230/2230A TRANSISTOR (NPN) FEATURE z High voltage: VCEO=180V(2SC2230A) z High DC Current Gain 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO . |
| Features | z High voltage: VCEO=180V(2SC2230A) z High DC Current Gain 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage 2SC2230 2SC2230A VEBO IC PC TJ Tstg Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 200 160 180 5 0.1 0.8 150 -5. |
| Part Number | 2SC2230A |
| Manufacturer | Toshiba |
| Title | Silicon NPN Triple Diffused Type Transistor |
| Description | 2SC2230,2SC2230A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC2230,2SC2230A High-Voltage General Amplifier Applications Color TV Class-B Sound Output Applications Unit: mm • • High breakdown voltage: VCEO = 180 V (2SC2230A) High DC current gain Maximum Ratings (Ta = 25°C). |
| Features | V, IE = 0 VEB = 5 V, IC = 0 VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 50 mA IC = 50 mA, IB = 5 mA VCE = 10 V, IC = 1 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Min ― ― 120 80 ― 0.50 50 ― Typ. ― ― ― ― ― 0.60 ― ― Max 0.1 0.1 400 ― 0.5 0.70 ― 7.0 V V MHz pF Unit µA µA Note: hFE (1) classification Y: 120 to 240, GR: 200 to 400 1 2004-07-07 Free Datasheet http://www.Datasheet4U.com 2SC. |
| Part Number | 2SC2230A |
| Manufacturer | LZG |
| Title | SILICON NPN TRANSISTOR |
| Description | 2SC2230(3DG2230) 2SC2230A(3DG2230A) NPN /SILICON NPN TRANSISTOR :,/Purpose: High voltage general amplifier, color TV class B sound output applications. :VCEO ,/Features: High voltage, high DC current gain. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 200 V VCEO VEBO 2SC22. |
| Features | High voltage, high DC current gain. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 200 V VCEO VEBO 2SC2230 2SC2230A 160 180 V 5.0 V IC 100 mA IB 50 mA PC 800 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob VCB=200V IE=0 VEB=5.0V IC=0 VCE=10V IC=10mA VCE=10V IC=50mA IC=50m. |
similar datasheet
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|---|---|---|---|---|
| 1 | 2SC2230 |
Toshiba Semiconductor |
TRANSISTOR |
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| 2 | 2SC2230 |
FOSHAN BLUE ROCKET |
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| 3 | 2SC2230 |
JIANGSU CHANGJIANG |
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| 4 | 2SC2230 |
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| 5 | 2SC2230 |
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| 6 | 2SC2230 |
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| 7 | 2SC2231 |
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| 8 | 2SC2231A |
Toshiba |
SILICON NPN TRANSISTOR |
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| 9 | 2SC2233 |
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| 10 | 2SC2233 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
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Desde 2024. D4U Semiconductor.
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