Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | 2SC2230 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC2230 |
| Manufacturer | FOSHAN BLUE ROCKET |
| Title | (2SC2230/A) SILICON NPN TRANSISTOR |
| Description | TO-92LM NPN 。Silicon NPN transistor in a TO-92LM Plastic Package. / Features VCEO ,。 High voltage, high DC current gain. / Applications ,。 High voltage general amplifier, color TV class B sound output applications / Equivalent Circuit / Pinning 123 PIN1：Base PIN 2：Collector PIN 3：Emi. |
| Features | VCEO ,。 High voltage, high DC current gain. / Applications ,。 High voltage general amplifier, color TV class B sound output applications / Equivalent Circuit / Pinning 123 PIN1：Base PIN 2：Collector PIN 3：Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range Y 120～240 GR 200～400 http://www.fsbrec.com 1/6 2SC2230(A) Rev.E Mar.-2016 / Absolute Maximum Ratin. |
| Part Number | 2SC2230 |
| Manufacturer | JIANGSU CHANGJIANG |
| Title | (2SC2230/A) NPN Transistor |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors TO-92MOD 1. EMITTER 2SC2230/2230A TRANSISTOR (NPN) FEATURE z High voltage: VCEO=180V(2SC2230A) z High DC Current Gain 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO . |
| Features | z High voltage: VCEO=180V(2SC2230A) z High DC Current Gain 2. COLLECTOR 3. BASE 123 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage 2SC2230 2SC2230A VEBO IC PC TJ Tstg Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 200 160 180 5 0.1 0.8 150 -5. |
| Part Number | 2SC2230 |
| Manufacturer | LZG |
| Title | SILICON NPN TRANSISTOR |
| Description | 2SC2230(3DG2230) 2SC2230A(3DG2230A) NPN /SILICON NPN TRANSISTOR :,/Purpose: High voltage general amplifier, color TV class B sound output applications. :VCEO ,/Features: High voltage, high DC current gain. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 200 V VCEO VEBO 2SC22. |
| Features | High voltage, high DC current gain. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO 200 V VCEO VEBO 2SC2230 2SC2230A 160 180 V 5.0 V IC 100 mA IB 50 mA PC 800 mW Tj 150 ℃ Tstg -55～150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob VCB=200V IE=0 VEB=5.0V IC=0 VCE=10V IC=10mA VCE=10V IC=50mA IC=50m. |
| Part Number | 2SC2230 |
| Manufacturer | WEJ |
| Title | NPN Transistor |
| Description | RoHS 2SC2230 2SC2230 FEATURE Power dissipation PCM: TRANSISTOR (NPN) TO-92MOD 1. EMITTER 2. COLLECTOR 0.8 W (Tamb=25℃) 3. BASE Collector current 0.1 A ICM: Collector-base voltage V(BR)CBO: 200 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERIST. |
| Features | Power dissipation PCM: TRANSISTOR (NPN) TO-92MOD 1. EMITTER 2. COLLECTOR 0.8 W (Tamb=25℃) 3. BASE Collector current 0.1 A ICM: Collector-base voltage V(BR)CBO: 200 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless otherwise specified) Test conditions MIN 200 160 5 0.1 10 0.1 120 400 0.5 0.7 50 V V MHz MA. |
| Part Number | 2SC2230 |
| Manufacturer | Changjiang |
| Title | NPN Transistor |
| Description | TO-92MOD PLASTIC-ENCAPSULATE TRANSISTORS 2SC2230 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.8W (Tamb=25ºC) Collector Current ICM: 0.1A Collector-base voltage V (BR) CBO TO-92 MOD 1. EMITTER 2. COLLECTOR 3. BASE : 200V Operating and storage junction temperature range TJ, Tstg: -55ºC to +. |
| Features | Power dissipation PCM: 0.8W (Tamb=25ºC) Collector Current ICM: 0.1A Collector-base voltage V (BR) CBO TO-92 MOD 1. EMITTER 2. COLLECTOR 3. BASE : 200V Operating and storage junction temperature range TJ, Tstg: -55ºC to + 150ºC ELECTRICAL CHARACTERISTICS (Tamb=25ºC unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2230A |
Toshiba |
Silicon NPN Triple Diffused Type Transistor |
|
| 2 | 2SC2230A |
FOSHAN BLUE ROCKET |
(2SC2230/A) SILICON NPN TRANSISTOR |
|
| 3 | 2SC2230A |
JIANGSU CHANGJIANG |
(2SC2230/A) NPN Transistor |
|
| 4 | 2SC2230A |
LZG |
SILICON NPN TRANSISTOR |
|
| 5 | 2SC2231 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 6 | 2SC2231A |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 7 | 2SC2233 |
Toshiba |
SILICON NPN TRANSISTOR |
|
| 8 | 2SC2233 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 9 | 2SC2233 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 10 | 2SC2235 |
Toshiba Semiconductor |
TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
|