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2SC2140 SILICON POWER TRANSISTOR


2SC2140
Part Number 2SC2140
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2SC2140
Part Number 2SC2140
Manufacturer INCHANGE
Title NPN Transistor
Description ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 350V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE .
Features O Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A hFE DC Current Gain IC= 5A; VCE= 5V ICBO Collector Cutoff Current VCB= 400V; IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 Switching Times tr Rise Time t.

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