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2SC2140 |
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| Part Number | 2SC2140 |
| Manufacturer | SavantIC |
| Description | ·With TO-3 package ·High voltage ,high speed APPLICATIONS ·Switching regulator applications ·High speed DC-DC converter applications PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplifi... |
| Features |
oltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ; IB=0 IC=1mA ; IE=0 IE=1mA ; IC=0 IC=5A; IB=1A IC=5A; IB=1A VCB=500V; IE=0 VEB=7V; IC=0 IC=5A ; VCE=5V 20 MIN 350 500 7
2SC2140
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE
TYP.
MAX
UNIT V V V
1.0 1.5 0.1 0.1
V V mA mA
2
SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC2140
Fig.... |
| Document |
 2SC2140 Data Sheet
PDF 141.07KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC2140 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC2148 |
NEC |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
|
| 3 | 2SC2149 |
NEC |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
|
| 4 | 2SC2101 |
Toshiba |
Silicon NPN POWER TRANSISTOR |
|
| 5 | 2SC2101 |
HGSemi |
Silicon NPN POWER TRANSISTOR |
|
| 6 | 2SC2102 |
Toshiba |
SILICON NPN TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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