Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC1971 |
| Part Number | 2SC1971 |
| Manufacturer | Mitsubishi Electric Semiconductor |
| Title | NPN Transistor |
| Description | . |
| Features | . |
2SC1971 |
| Part Number | 2SC1971 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·High Power Gain: Gpe≥ 10dB,f= 175MHz, PO= 6W; VCC= 13.5V ·High Reliability APPLICATIONS ·Designed for RF power amplifiers on VHF band mobile radio applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL VCBO VCEO VEBO IC PARAMETER Collector-Base Voltage VALUE 35 UNIT V Collector-Emitter Voltage . |
| Features | C=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC1971 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 10mA, IE= 0 35 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; RBE= ∞ 17 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 5mA, IC= 0 4 V ICBO Collector Cutoff Current VCB= 25V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1970 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | 2SC1972 |
Mitsubishi Electric Semiconductor |
NPN Transistor |
|
| 3 | 2SC1972 |
ASI |
NPN SILICON RF POWER TRANSISTOR |
|
| 4 | 2SC1972 |
HGSemi |
Silicon NPN POWER TRANSISTOR |
|
| 5 | 2SC1972 |
Eleflow |
silicon NPN epitaxial planar type transistor |
|
| 6 | 2SC1973 |
Panasonic Semiconductor |
NPN Transistor |
|
| 7 | 2SC1974 |
ETC |
Si NPN Transistor |
|
| 8 | 2SC1975 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC1904 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SC1904 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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