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| Part Number | 2SC1881K |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC1881K |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.2V(Max)@ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for . |
| Features |
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA, IB= 0
V(BR)EBO Emitter –Base Breakdown Voltage IC= 50mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A ,IB= 20mA ICBO Collector Cutoff Current VCB= 60V, IE= 0 ICEO Collector Cutoff Current VCE= 30V, IB= 0 hFE-1 DC Current Gain IC= 1.5A ; VCE= 1.5V hFE-2 DC Current Gain IC= 2.5A ; VCE= 1.5V Switching . |
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| 10 | 2SC1815 |
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Desde 2024. D4U Semiconductor.
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