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2SC1881K |
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| Part Number | 2SC1881K |
| Manufacturer | Inchange Semiconductor |
| Description | ·High DC Current Gain- : hFE = 1000(Min)@ IC= 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 60V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.2V(Max)@ IC= 2.5A ·Minimum Lo... |
| Features |
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA, IB= 0
V(BR)EBO Emitter –Base Breakdown Voltage IC= 50mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2.5A ,IB= 20mA ICBO Collector Cutoff Current VCB= 60V, IE= 0 ICEO Collector Cutoff Current VCE= 30V, IB= 0 hFE-1 DC Current Gain IC= 1.5A ; VCE= 1.5V hFE-2 DC Current Gain IC= 2.5A ; VCE= 1.5V Switching Times Ton Turn on time Toff Turn off time VCC = 11 V, IC = 2 A, IB1 = –IB2 = 8 mA MIN TYP. MAX UNIT 60 V 7 V 1.2 V 0.2 mA 0.4 mA 1000 500 1 μs 5 μs NOTICE： ISC reserves the rights... |
| Document |
 2SC1881K Data Sheet
PDF 215.07KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1881 |
Hitachi Semiconductor |
NPN Transistor |
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| 2 | 2SC1881 |
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SILICON POWER TRANSISTOR |
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| 3 | 2SC1881K |
Hitachi Semiconductor |
Silicon NPN Transistor |
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| 4 | 2SC1880 |
INCHANGE |
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| 5 | 2SC1880 |
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| 6 | 2SC1803 |
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