Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
2SC1654 |
| Part Number | 2SC1654 |
| Manufacturer | Kexin |
| Title | NPN Transistor |
| Description | SMD Type NPN Silicon Epitaxial Transistor 2SC1654 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 High voltage VCEO : 160V +0.1 1.3-0.1 High DC current gain.hFE=130 typ.(VCE=3.0V,IC=15mA) 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-. |
| Features | 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PD Tj Tstg Rating 180 160 5 50 150 125 -55 to +125 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collec. |
2SC1654 |
| Part Number | 2SC1654 |
| Manufacturer | Jin Yu Semiconductor |
| Title | TRANSISTOR |
| Description | 2SC1654 TRANSISTOR(NPN) SOT–23 FEATURES High Frequency Power Amplifier Application Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Curr. |
| Features |
High Frequency Power Amplifier Application Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 180 160 5 50 150 83. |
2SC1654 |
| Part Number | 2SC1654 |
| Manufacturer | SeCoS |
| Title | NPN Transistor |
| Description | 2SC1654 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free 0.05A , 180V NPN Epitaxial Planar Transistor FEATURE SOT-23 A 3 3 High Frequency Power Amplifier Application Power Switching Applications L Top View C B 1 2 2 CLASSIFICATION OF hFE(1) . |
| Features |
SOT-23 A 3 3 High Frequency Power Amplifier Application Power Switching Applications L Top View C B 1 2 2 CLASSIFICATION OF hFE(1) Product-Rank Range Marking Code 2SC1654-N5 90~180 N5 2SC1654-N6 135~270 N6 2SC1654-N7 200~400 N7 F K 1 E D G Millimeter Min. Max. 2.80 3.04 2.10 2.55 1.20 1.40 0.89 1.15 1.78 2.04 0.30 0.50 H J PACKAGE INFORMATION Package SOT-23 MPQ 3K LeaderSize 7’ inch. |
2SC1654 |
| Part Number | 2SC1654 |
| Manufacturer | Galaxy Semi-Conductor |
| Title | Silicon Epitaxial Planar Transistor |
| Description | BL Galaxy Electrical Silicon Epitaxial Planar Transistor FEATURES z High DC current gain:hFE=130(Typ) (VCE=3V,IC=15mA) z High voltage. Production specification 2SC1654 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. 2SC165. |
| Features | z High DC current gain:hFE=130(Typ) (VCE=3V,IC=15mA) z High voltage. Production specification 2SC1654 Pb Lead-free APPLICATIONS z Audio frequency general purpose amplifier applications. SOT-23 ORDERING INFORMATION Type No. 2SC1654 Marking N5/N6/N7 Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO IC PC Tj,Tstg Parameter Collector-Base Voltage Collec. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1651 |
Rohm |
Triple Diffusied NPN Silicon Transistor |
|
| 2 | 2SC1651S |
Rohm |
HIGH VOLTAGE AMPLIFIER TRANSISTOR |
|
| 3 | 2SC1652 |
Rohm |
Medium Power Amp. Epitaxial Planar NPN Silicon Transistors |
|
| 4 | 2SC1653 |
NEC |
NPN Transistor |
|
| 5 | 2SC1653 |
Kexin |
NPN Silicon Epitaxial Transistor |
|
| 6 | 2SC1655A |
ETC |
(2SCxxxxA) Transistors |
|
| 7 | 2SC1609 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SC1609 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | 2SC1610 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SC1610 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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