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| Distributor | Stock | Price | Buy |
|---|
2SC1610 |
| Part Number | 2SC1610 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·With TO-3 Package ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base. |
| Features | Voltage IC=10A; IB= 1.0A VBE(sat) Base-Emitter Saturation Voltage IC=10A; IB= 1.0A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 hFE DC Current Gain IC=5A; VCE= 5V MIN TYP. MAX UNIT 1.0 V 2.0 V 100 V 6 V 30 160 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time wit. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1615 |
Rohm |
NPN Transistor |
|
| 2 | 2SC1617 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC1617 |
Toshiba |
Silicon NPN Transistor |
|
| 4 | 2SC1617 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC1618 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SC1618 |
INCHANGE |
NPN Transistor |
|
| 7 | 2SC1619 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 8 | 2SC1619 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC1609 |
INCHANGE |
NPN Transistor |
|
| 10 | 2SC1609 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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