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2SC1617 |
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| Part Number | 2SC1617 |
| Manufacturer | INCHANGE |
| Description | ·Silicon NPN triple diffused type ·High voltage ·Wide area of safe operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Black and white TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO VEBO IC P. |
| Features | E(sat) Collector-Emitter Saturation Voltage IC=5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC=5A; IB= 0.5A V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 hFE DC Current Gain IC=1A; VCE= 5V ICBO Collector Cutoff Current VCB= 250V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 MIN TYP. MAX UNIT 1.0 V 1.5 V 100 V 5 V 30 150 1.0 mA 1.0 mA NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is. |
| Datasheet |
 2SC1617 Data Sheet
PDF 174.29KB |
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2SC1617 |
| Part Number | 2SC1617 |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | ; SILICON NPN TRIPLE DIFFUSED TYPE BLACK AND WHITE TV HORIZONTAL OUTPUT APPLICATIONS. FEATURES • High Voltage : VCBO=300V • Wide Safe Oprating Area. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO Collector-Emitter Voltage v CEO Emitter-Base Voltage v . |
| Features |
• High Voltage : VCBO=300V • Wide Safe Oprating Area. Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage SYMBOL VCBO Collector-Emitter Voltage v CEO Emitter-Base Voltage v EBO Collector Current ic Emitter Current XE Collector Power Dissipation Junction Temperature Storage Temperature Range pC T J T stg RATING 300 100 5 7 -7 50 150 -55M.50 UNIT V V V A A W °C. |
2SC1617 |
| Part Number | 2SC1617 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3 package ·High voltage: VCBO(min):300V ·Wide safe oprating area APPLICATIONS ·For B/W white TV horizontal output applications PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO I. |
| Features | ut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=100mA; IB=0 IC=5A;IB=0.5 A IC=5A;IB=0.5 A VCB=250V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=0.5A ; VCE=5V 30 15 MIN 100 SYMBOL VCEO(SUS) VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT 2SC1617 TYP. MAX UNIT V 1.2 1.5 1.0 1.0 150 V V mA mA 10 MHz 2 SavantIC Semiconductor www.DataShe. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC1610 |
INCHANGE |
NPN Transistor |
|
| 2 | 2SC1610 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SC1615 |
Rohm |
NPN Transistor |
|
| 4 | 2SC1618 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | 2SC1618 |
INCHANGE |
NPN Transistor |
|
| 6 | 2SC1619 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SC1619 |
INCHANGE |
NPN Transistor |
|
| 8 | 2SC1609 |
INCHANGE |
NPN Transistor |
|
| 9 | 2SC1609 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SC1621 |
NEC |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
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