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| Part Number | 2SC1568 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SC1568 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Silicon NPN epitaxial planar type ·Low Collector-Emitter Breakdown Voltage ·Good Linearity of hFE ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage type medium output power amplifications ABSOLUTE MAXI. |
| Features | ase Breakdown Voltage IC= 1mA ; IE= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; RBE= ∞ V(BR)EBO Emitter-Base Breakdown Vltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 1.0A; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 0.5A; IB= 50mA ICBO Collector Cutoff Current VCB= 18V; IE= 0 hFE-1 DC Current Gain IC= 500mA ; VCE= 2V hFE-2 DC Current. |
| Part Number | 2SC1568 |
| Manufacturer | Panasonic Semiconductor |
| Title | Silicon NPN Transistor |
| Description | Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 φ 3.16±0.1 8.0+–00..15 Unit: mm 3.2±0.2 3.8±0.3 11.0±0.5 ■ Features 3.05±0.1 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operati. |
| Features |
3.05±0.1
• Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances and high efficiency with a lowvoltage power supply • TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts 1.9±0.1 16.0±1.0 / ■ Absolute Maximum Ratings Ta = 25°C e e) Parameter Symbol Rating Unit c e. d typ Collector-b. |
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| 1 | 2SC1560 |
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| 7 | 2SC1569 |
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| 8 | 2SC1569 |
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| 9 | 2SC1569 |
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| 10 | 2SC1501 |
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Desde 2024. D4U Semiconductor.
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