Part Number | 2SC1567 |
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Part Number | 2SC1567 |
Manufacturer | INCHANGE |
Title | NPN Transistor |
Description | ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 100V(Min) ·Good Linearity of hFE ·Complement to Type 2SA794 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-frequency high power driver. ·Optimum for the driver stage of low-frequency . |
Features | mitter Breakdown Voltage IC= 0.1mA ; IB= 0 V(BR)EBO Emitter-Base Breakdown Vltage IE= 1μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 500mA; IB= 50mA hFE-1 DC Current Gain IC= 150mA; VCE= 10V hFE-2 DC Current Gain IC= 500mA; VCE= 5V fT Current-Gain—Bandwidth Product IE= -50mA ; VCB= 10V COB Output Capacitance. |
Part Number | 2SC1567 |
Manufacturer | Panasonic Semiconductor |
Title | Silicon NPN Transistor |
Description | Power Transistors 2SC1567, 2SC1567A Silicon NPN epitaxial planar type For low-frequency high power driver Complementary to 2SA0794, 2SA0794A φ 3.16±0.1 8.0+–00..15 Unit: mm 3.2±0.2 3.8±0.3 11.0±0.5 ■ Features 3.05±0.1 • High collector-emitter voltage (Base open) VCEO • Optimum for the drive. |
Features |
3.05±0.1
• High collector-emitter voltage (Base open) VCEO • Optimum for the driver stage of low-frequency and 40 W to 100 W output amplifier • TO-126B package which requires no insulation plate for installation to the heat sink 1.9±0.1 16.0±1.0 / ■ Absolute Maximum Ratings Ta = 25°C e e) Parameter Symbol Rating Unit c e. d typ Collector-base voltage 2SC1567 VCBO 100 V n d stag tinue (. |
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1 | 2SC1560 |
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2 | 2SC1567A |
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