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| Distributor | Stock | Price | Buy |
|---|
2SB645 |
| Part Number | 2SB645 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·High Power Dissipation- : PC= 150W(Max)@TC=25℃ ·Complement to Type 2SD665 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ·Recommended for 200W . |
| Features | V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -10mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VBE(on) Base-Emitter On Voltage IC= -5A; VCE= -5V ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -1A; VCE= -5V COB Output Capacitan. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB642 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 2 | 2SB643 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 3 | 2SB644 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 4 | 2SB646 |
Hitachi |
Silicon PNP Epitaxial Transistor |
|
| 5 | 2SB646A |
Hitachi |
Silicon PNP Epitaxial Transistor |
|
| 6 | 2SB647 |
Hitachi Semiconductor |
PNP Transistor |
|
| 7 | 2SB647 |
Renesas Technology |
PNP Transistor |
|
| 8 | 2SB647 |
UTC |
PNP Transistor |
|
| 9 | 2SB647 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |
|
| 10 | 2SB647-B |
MCC |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
|