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2SB645 |
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| Part Number | 2SB645 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) ·High Power Dissipation- : PC= 150W(Max)@TC=25℃ ·Complement to Type 2SD665 ·Minimum Lot-to-Lot variations for robust device performance and... |
| Features |
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -0.1A; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -10mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A
VBE(on) Base-Emitter On Voltage
IC= -5A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -1A; VCE= -5V
COB
Output Capacitance
IE= 0; VCB= -10V; f= 1MHz
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -10V
MIN TYP. MAX UNIT
-200
V
-5
V
-2.0
V
-1.5
V
-0.1 mA
-0.1 mA
40
140
450
pF
12
MHz
hFE Classific... |
| Document |
 2SB645 Data Sheet
PDF 208.70KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | 2SB642 |
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Desde 2024. D4U Semiconductor.
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