Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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2SB1658 |
| Part Number | 2SB1658 |
| Manufacturer | NEC |
| Title | Silicon PNP Transistor |
| Description | DATA SHEET SILICON TRANSISTOR 2SB1658 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE(sat) VCE(sat) = −0.15 V Max (@lC/lB = 1.0 A/50 mA) 3.8 ± 0.2 (0.149) PACKAGE DIMENSIONS in millimeters (inches) 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) φ 3.2 ± 0.2 . |
| Features |
• Low VCE(sat) VCE(sat) = −0.15 V Max (@lC/lB = 1.0 A/50 mA) 3.8 ± 0.2 (0.149) PACKAGE DIMENSIONS in millimeters (inches) 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) φ 3.2 ± 0.2 ( φ 0.126) 12.0 MAX. (0.472 MAX.) • High DC Current Gain hEF = 150 to 600 (@VCE = −2.0 V, lC = −1.0 A) ABSOLUTE MAXIMUM RATINGS Maximum Voltage and Current (TA = 25 °C) Collector to Base Voltage Collector to Emitter Vol. |
2SB1658 |
| Part Number | 2SB1658 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-126 package ·Low collector saturation voltage ·High DC current gain APPLICATIONS ·For audio frequency amplifier and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAME. |
| Features | 3 VBEsat ICBO IEBO hFE-1 hFE-2 fT COB Collector-emitter breakdown voltage IC=-10mA ;IB=0 IC=-1A; IB=-50mA IC=-2A; IB=-100mA IC=-4A; IB=-200mA IC=-1A; IB=-100mA VCB=-30V; IE=0 VEB=-6V; IC=0 IC=-1A ; VCE=-2V IC=-4A ; VCE=-2V IC=-50mA ; VCE=-10V IE=0;f=1MHz ; VCB=-10V -30 V Collector-emitter saturation voltage -0.15 V Collector-emitter saturation voltage -0.25 V Collector-emitter saturatio. |
2SB1658 |
| Part Number | 2SB1658 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon PNP transistor |
| Description | TO-126F PNP 。Silicon PNP transistor in a TO-126F Plastic Package. / Features ；。 Low saturation voltage, high DC current gain. / Applications 。 Audio frequency power amplifier and switching applications. / Equivalent Circuit / Pinning 12 3 PIN1：Emitter PIN 2：Collector PIN 3：Base /. |
| Features | ；。 Low saturation voltage, high DC current gain. / Applications 。 Audio frequency power amplifier and switching applications. / Equivalent Circuit / Pinning 12 3 PIN1：Emitter PIN 2：Collector PIN 3：Base / hFE Classifications & Marking 。See Marking Instructions. http://www.fsbrec.com 1/6 2SB1658 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Volta. |
2SB1658 |
| Part Number | 2SB1658 |
| Manufacturer | SeCoS |
| Title | PNP Transistor |
| Description | Elektronische Bauelemente 2SB1658 PNP General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES High Current Amplifier and Switching Applications TO-126 1Emitter 2Collector 3Base A E F N L M K B H J C D G REF. A B C D E F G Millimeter Min. M. |
| Features | High Current Amplifier and Switching Applications TO-126 1Emitter 2Collector 3Base A E F N L M K B H J C D G REF. A B C D E F G Millimeter Min. Max. 7.40 7.80 2.50 2.90 10.60 11.00 15.30 15.70 3.70 3.90 3.90 4.10 2.29 TYP. REF. H J K L M N Millimeter Min. Max. 1.10 1.50 0.45 0.60 0.66 0.86 2.10 2.30 1.17 1.37 3.00 3.20 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parame. |
2SB1658 |
| Part Number | 2SB1658 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·High Collector Current -IC= -5A ·High DC Current Gain- : hFE= 150~600@IC= -1A ·Low-Collector Saturation Voltage- : VCE(sat)= -0.15V(Max.)@IC= -1A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio frequency amplifier and switching ap. |
| Features | SYMBOL PARAMETER CONDITIONS VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1A; IB= -50mA VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2A; IB= -0.1A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= -4A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.1A ICBO Collector Cutoff Current VCB= -30V; IE= 0 IEBO Emitter Cutoff Current VEB= -6V; IC= 0 hFE-. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1653 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 2 | 2SB1655 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB1655 |
SavantIC |
PNP Transistor |
|
| 4 | 2SB1657 |
NEC |
Silicon PNP Transistor |
|
| 5 | 2SB1657 |
INCHANGE |
PNP Transistor |
|
| 6 | 2SB1657 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | 2SB1659 |
Sanken electric |
Silicon PNP Transistor |
|
| 8 | 2SB1602 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 9 | 2SB1603 |
Panasonic Semiconductor |
Silicon PNP Transistor |
|
| 10 | 2SB1603 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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