Part Number | 2SB1566 |
Distributor | Stock | Price | Buy |
---|
Part Number | 2SB1566 |
Manufacturer | SavantIC |
Title | SILICON POWER TRANSISTOR |
Description | ·With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide SOA (safe operating area) ·Complement to type 2SD2395 PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL. |
Features | own voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA ;IB=0 IC=-50µA ;IE=0 IE=-50µA ;IC=0 IC=-2A ;IB=-0.2A IC=-2A ;IB=-0.2A VCB=-60V; IE=0 VEB=-7V; IC=0 IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V 100 40 60 MIN -50 -60 -5 2SB1566 . |
Part Number | 2SB1566 |
Manufacturer | BLUE ROCKET ELECTRONICS |
Title | Silicon PNP transistor |
Description | TO-220F PNP 。Silicon PNP transistor in a TO-220F Plastic Package. / Features ,, 2SD2395 。 Low VCE(sat), wide SOA, complementary pair with 2SD2395. / Applications ,。 Voltage regulator, DC-DC converter and relay driver, audio frequency power amplifier output. / Equivalent Circuit / Pinn. |
Features | ,, 2SD2395 。 Low VCE(sat), wide SOA, complementary pair with 2SD2395. / Applications ,。 Voltage regulator, DC-DC converter and relay driver, audio frequency power amplifier output. / Equivalent Circuit / Pinning 1 23 PIN1:Base PIN 2:Collector PIN 3:Emitter / hFE Classifications & Marking hFE Classifications Symbol hFE Range E 100~200 F 160~320 http://www.fsbrec.com 1/5 2SB1566 . |
Part Number | 2SB1566 |
Manufacturer | INCHANGE |
Title | PNP Transistor |
Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) ·Wide Area of Safe Operation ·Complement to Type 2SD2395 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desig. |
Features | CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0. |
similar datasheet
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | 2SB156 |
Hitachi |
PNP Transistor | |
2 | 2SB1560 |
Sanken electric |
Silicon PNP Transistor | |
3 | 2SB1560 |
SavantIC |
SILICON POWER TRANSISTOR | |
4 | 2SB1560 |
INCHANGE |
PNP Transistor | |
5 | 2SB1561 |
Rohm |
Medium Power Transistor | |
6 | 2SB1561-Q |
TY Semiconductor |
Transistor | |
7 | 2SB1561U |
SURGE |
PNP Silicon Diode | |
8 | 2SB1562 |
Inchange Semiconductor |
Silicon PNP Power Transistor | |
9 | 2SB1565 |
Rohm |
Power Transistor | |
10 | 2SB1565 |
BLUE ROCKET ELECTRONICS |
Silicon PNP transistor |