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| Part Number | 2SB1565 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SB1565 |
| Manufacturer | Rohm |
| Title | Power Transistor |
| Description | Transistors 2SB1370 2SB1655 / 2SB1565 (94L-411-B303) (94L-456-B349) 319 . |
| Features | . |
| Part Number | 2SB1565 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide SOA (safe operating area) ·Complement to type 2SD2394 PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL. |
| Features | n voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=-1mA ;IB=0 IC=-50µA ;IE=0 IE=-50µA ;IC=0 IC=-2A ;IB=-0.2A IC=-2A ;IB=-0.2A VCB=-60V; IE=0 VEB=-7V; IC=0 IC=-0.5A ; VCE=-5V IE=0 ; VCB=-10V;f=1MHz IC=-0.5A ; VCE=-5V 100 MIN -60 -80 -7 2SB1565 SYMBOL . |
| Part Number | 2SB1565 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplificat. |
| Features | tter Breakdown Voltage IC= -1mA; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= -50μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A VBE(sat) Base-Emitter Saturation Voltage IC= -2A; IB= -0.2A ICBO Collector Cutoff Current VCB= -60V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 hFE DC Current. |
similar datasheet
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| 8 | 2SB1562 |
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| 9 | 2SB1566 |
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| 10 | 2SB1566 |
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Desde 2024. D4U Semiconductor.
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