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| Distributor | Stock | Price | Buy |
|---|
2SB1551 |
| Part Number | 2SB1551 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain·Built-in resistor between base and emitter ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE M. |
| Features | NIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0 -80 V V(BR)CBO Collector-Base Breakdown Voltage IC= -50μA; IE= 0 -80 V VCE(sat)★1 Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA -1.5 V ICBO Collector Cutoff Current VCB= -80V; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -3 mA hFE DC Current Gain IC= -5A; VCE= -3V 1000 20000 COB Output C. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1550 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | 2SB1550 |
INCHANGE |
PNP Transistor |
|
| 3 | 2SB1553 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 4 | 2SB1554 |
Panasonic Semiconductor |
Silicon PNP epitaxial planar type Transistor |
|
| 5 | 2SB1555 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 6 | 2SB1555 |
INCHANGE |
PNP Transistor |
|
| 7 | 2SB1556 |
Toshiba Semiconductor |
TRANSISTOR |
|
| 8 | 2SB1556 |
INCHANGE |
PNP Transistor |
|
| 9 | 2SB1556 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | 2SB1557 |
Toshiba Semiconductor |
TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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