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2SB1551 |
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| Part Number | 2SB1551 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min) ·High DC Current Gain·Built-in resistor between base and emitter ·Built-in damper diode ·Minimum Lot-to-Lot variations for robust device per... |
| Features |
NIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -5mA; IB= 0
-80
V
V(BR)CBO Collector-Base Breakdown Voltage
IC= -50μA; IE= 0
-80
V
VCE(sat)★1 Collector-Emitter Saturation Voltage IC= -3A; IB= -6mA
-1.5
V
ICBO
Collector Cutoff Current
VCB= -80V; IE= 0
-10 μA
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
-3
mA
hFE
DC Current Gain
IC= -5A; VCE= -3V
1000
20000
COB
Output Capacitance
IE= 0; VCB= -10V; ftest= 1MHz
90
pF
fT★2
Current-Gain—Bandwidth Product
IE= 0.5A; VCE= -5V; ftest= 10MHz
12
★1:Measured using pulse current. ★2:Transition frequency of the device.
... |
| Document |
 2SB1551 Data Sheet
PDF 230.75KB |
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Desde 2024. D4U Semiconductor.
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