2SB1503 Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

2SB1503 Silicon PNP Transistor


2SB1503
Part Number 2SB1503
Distributor Stock Price Buy
INCHANGE
2SB1503
Part Number 2SB1503
Manufacturer INCHANGE
Title PNP Transistor
Description ·High DC Current Gain- : hFE= 5000(Min)@IC= -7A ·Low-Collector Saturation Voltage- : VCE(sat)= -2.5V(Max.)@IC= -7A ·Complement to Type 2SD2276 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier applications ·Optimum for 110.
Features ecified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -7A; IB= -7mA VBE(sat) Base-Emitter Saturation Voltage IC= -7A; IB= -7mA ICBO Collector Cutoff Current VCB= -160V; IE= 0 ICEO Collector Cutoff Current VCE= -140V; IB= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE-1 DC Current Gain.
SavantIC
2SB1503
Part Number 2SB1503
Manufacturer SavantIC
Title SILICON POWER TRANSISTOR
Description ·With TO-3PL package ·Complement to type 2SD2276 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification ·Optimum for 110W Hi-Fi output applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL).
Features itter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=-30mA ;IB=0 IC=-7A ;IB=-7mA IC=-7A ;IB=-7mA VCB=-160V; IE=0 VCE=-140V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V IC=-7A ; VCE=-5V IC=-0.5A ; VCE=-10V;f=1MHz 2000 5000 MIN.
New Jersey Semi-Conductor
2SB1503
Part Number 2SB1503
Manufacturer New Jersey Semi-Conductor
Title Silicon PNP Darlington Power Transistor
Description • High DC Current Gain: hFE= 5000(Min)@lc= -7A • Low-Collector Saturation Voltage: VcE
Features 4.10 2.60 3.50 2.10 4.10 3.10 20.00 3.90 2.40 3.10 1.90 3.90 2.90 q R Tstg Storage Temperature Range -55-150 °c u w NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assume.

similar datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SB1502
Panasonic Semiconductor
Silicon PNP Transistor Datasheet
2 2SB1502
New Jersey Semi-Conductor
Silicon PNP Darlington Power Transistor Datasheet
3 2SB1502
INCHANGE
PNP Transistor Datasheet
4 2SB1504
Panasonic
Silicon PNP epitaxial planar type darlington Datasheet
5 2SB1507
Sanyo Semicon Device
PNP/NPN Epitaxial Planar Silicon Transistors Datasheet
6 2SB1507
SavantIC
SILICON POWER TRANSISTOR Datasheet
7 2SB1507
New Jersey Semi-Conductor
Silicon PNP Power Transistor Datasheet
8 2SB1507
INCHANGE
PNP Transistor Datasheet
9 2SB1508
Sanyo Semicon Device
PNP/NPN Epitaxial Planar Silicon Transistors Datasheet
10 2SB1508
SavantIC
SILICON POWER TRANSISTOR Datasheet
More datasheet from Panasonic Semiconductor
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad