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2SB1503 |
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| Part Number | 2SB1503 |
| Manufacturer | Panasonic Semiconductor |
| Description | Power Transistors 2SB1503 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2276 6.0 20.0±0.5 φ 3.3±0.2 5.0±0.3 3.0 Unit: mm 26.0±0.5 10.0 s Features q q q ... |
| Features |
q q q
Optimum for 110W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat): < –2.5V 1.5 2.0 4.0 1.5 Solder Dip s 20.0±0.5 2.5 2.0±0.3 3.0±0.3 1.0±0.2 Absolute Maximum Ratings (TC=25˚C) Parameter Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –160 –140 –5 –12 –7 120 3.5 150 –55 to +150 Unit V V V A 2.7±0.3 0.6±0.2 5.45±0.3 10.9±0.5 Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature S... |
| Document |
 2SB1503 Data Sheet
PDF 70.97KB |
Similar Datasheet
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