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| Part Number | 2SB1477 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | 2SB1477 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SD2236 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta. |
| Features | E=0 V(BR)EBO Emitter-Base Beakdown Voltage IE=-50μA; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A VBE(sat) Base-Emitter Saturation Voltage IC= -3A; IB= -0.3A ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -1A; VCE= -5V MIN TYP. MAX UNIT 100 V 100 V 5 V -1.5 V -2.0 V -10 μA -10 μA . |
| Part Number | 2SB1477 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-247 package ·Complement to type 2SD2236 ·Wide area of safe operation APPLICATIONS ·For drvier and general purpose applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION Absolute maximum ratings(Tc=25 ) SYMBOL VCBO VCEO VEBO IC PC Tj Tstg PARAMETER Coll. |
| Features | tage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=-10mA; IB=0 IC=-0.1mA; IE=0 IE=-0.1mA; IC=0 IC=-3A;IB=-0.3 A IC=-3A;IB=-0.3 A VCB=-100V; IE=0 VEB=-5V; IC=0 IC=-1A ; VCE=-5V 60 MIN -100 -100 -5 2SB1477 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE TYP. MAX UNIT V V V -1.5 -2.0 -10 -10 320 V V µA µA hFE classifications D 60-120 E 100-200 F. |
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Desde 2024. D4U Semiconductor.
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